PART |
Description |
Maker |
KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16)的CMOS掩模ROM00万位Mx8 / 512Kx16)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
AT49BV8192A-11CI |
EEPROM|FLASH|512KX16/1MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Air Cost Control
|
MX23C8111PC-95 MX23C8111PC-12 |
ROM|512KX16/1MX8|CMOS|DIP|42PIN|PLASTIC 光盘| 512KX16/1MX8 |的CMOS |双酯| 42PIN |塑料
|
Macronix International Co., Ltd.
|
KM23V8105D KM23V8105DG KM23V8105G |
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16),5伏只,闪 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16),5伏只,闪
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
1N4007 1N4004 1N4022 1N4003 |
IC, 8MBIT FLASH, 1MX8/512KX16, 3.3V, TSOP48 1.0 Ampere General Purpose Rectifiers
|
Fairchild Semiconductor Corporation
|
MX29LV800CTXHC-90 MX29LV800CTXHC-90G MX29LV800CBXH |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 800万位[1Mx8/512K x16] CMOS单电V时仅闪存 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO44 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 8M X 16 FLASH 3V PROM, 70 ns, PBGA48 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
29LV800BB-90 29LV800BB-70 MX29LV800BTXBC-90G MX29L |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
http:// Macronix International
|
K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF |
CONNECTOR ACCESSORY 512Kx16 bit Low Power Full CMOS Static RAM 512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
WE512K16-140G4CA WE512K16-140G4Q WE512K16-150G4C W |
512Kx16 CMOS EEPROM MODULE
|
WEDC[White Electronic Designs Corporation]
|